SAM7X256_14 Datasheet, PDF (588/662 Pages) ATMEL Corporation – ARM-based Flash MCU

38.4.3 Crystal Characteristics
Table 38-10. Crystal Characteristics
Symbol
Parameter
ESR
Equivalent Series Resistor Rs
C_M
C_SHUNT
Motional capacitance
Shunt capacitance
Conditions
Min
Typ
Max
Unit
Fundamental @3 MHz
Fundamental @8 MHz
Fundamental @16 MHz
200
100
Ω
80
Fundamental @20 MHz
50
8
fF
7
pF
38.4.4 XIN Clock Characteristics
Table 38-11. XIN Clock Electrical Characteristics
Symbol
Parameter
Conditions
Min
Max
Units
1/(t_CPXIN)
t_CPXIN
t_CHXIN
t_CLXIN
t_CLCH
t_CHCL
C_IN
R_IN
V_{XIN_IL}
V_{XIN_IH}
I_DDBP
XIN Clock Frequency
XIN Clock Period
XIN Clock High Half-period
XIN Clock Low Half-period
Rise Time
Fall Time
XIN Input Capacitance
XIN Pull-down Resistor
V_XIN Input Low-level Voltage
V_XIN Input High-level Voltage
Bypass Current Consumption
(1)
50.0
MHz
(1)
20.0
ns
(1)
8.0
ns
(1)
8.0
ns
(1)
400
(1)
400
(1)
46
pF
(1)
500
kΩ
(1)
-0.3
0.2 x V_DDPLL
V
(1)
0.8 x V_DDPLL
1.95
V
(1)
15
µΩ/MHz
Note: 1. These characteristics apply only when the Main Oscillator is in bypass mode (i.e., when MOSCEN = 0 and OSCBYPASS = 1
in the CKGR_MOR register, see the Clock Generator Main Oscillator Register.
Figure 38-2. XIN CLock Timing
t_CPXIN
V_{XIN_IH}
V_{XIN_IL}
t_CLCH
t_CHXIN
t_CHCL
t_CPXIN
t_CPXIN
SAM7X Series [DATASHEET]
6120K–ATARM–11-Feb-14
588