M16C1N Datasheet, PDF (180/238 Pages) Renesas Technology Corp – RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/10 SERIES

M16C/1N Group
18. Electrical Characteristics
Table 18.6 Flash memory version electrical characteristics
(Unless otherwise noted: Vcc = 4.2 to 5.5 V, Topr= 0 to 60^oC)
Symbol
Parameter
-
-
-
td(SR-ES)
-
Erase/write cycle (Note 2)
Word programming time
Block erasing time 2Kbyte block
8Kbyte block
16Kbyte block
32Kbyte block
Transition time from erasure operation
to erase-suspend
Data retention
Min.
100 (Note 3)
Standard
Typ. (Note 1)
75
0.2
0.4
0.7
1.2
10
Max.
600
9
9
9
9
20
Unit
cycle
µs
s
s
s
s
ms
year
Note1: Vcc=5.0V, Topr=25˚C
Note2: Definition of Programming and erasure times
The Programming and erasure times are defined to be per-block erasure times. For example a case where a 2K-
byte block is programmed in 1,024 operations by writing one word at a time and erased thereafter. Performing
multiple programs to the same address before an erase operation is prohibited.
Note 3: Minimum number of programming/erasure for which operation is guaranteed.
Erasure-suspend
request
(Interrupt request)
FMR46
td(SR-ES)
Rev.1.00 Oct 20, 2004 page 168 of 222
REJ09B0007-0100Z