PXF4333 Datasheet, PDF (336/361 Pages) Infineon Technologies AG – ABM 3G ATM Buf fer Manager

8
Electrical Characteristics
ABM-3G
PXF 4333 V1.1
Electrical Characteristics
8.1
Absolute Maximum Ratings
Table 8-1 Absolute Maximum Ratings
Parameter
Symbol
Limit Values Unit
Ambient temperature under biasPXF
T_A
-40 to 85
°C
Storage temperature
T_stg
-40 to 125
°C
IC supply voltage with respect to ground
V_DD
-0.3 to 3.6
V
Voltage on any pin with respect to ground
ESD robustness¹⁾
HBM: 1.5 kΩ, 100 pF
V_S
-0.4 to V_DD + 0.4 V
V_ESD,HBM 2000
V
1) _{According to MIL-Std 883D, method 3015.7 and ESD Association Standard EOS/ESD-5.1-1993.}
The RF Pins 20, 21, 26, 29, 32, 33, 34 and 35 are not protected against voltage stress > 300 V (versus V_S or
GND). The high frequency performance prohibits the use of adequate protective structures.
Note: Stresses above those listed here may cause permanent damage to the
device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
8.2
Operating Range
Table 8-2 Operating Range
Parameter
Ambient temperature
under bias
Junction temperature
Supply voltage 3.3V
Supply voltage 1.8V
Ground
Power dissipation
Symbol
Limit Values
min.
max.
T_A
-40
85
T_J
V_DD33
V_DD18
V_SS
P
3.0
1.62
0
125
3.6
1.98
0
2.5
Unit Test Condition
°C
°C
V
V
V
W
Note: In the operating range, the functions given in the circuit description are fulfilled.
Data Sheet
336
2001-12-17