HY5FS123235AFCP Datasheet, PDF (66/74 Pages) Hynix Semiconductor – 512M (16Mx32) GDDR4 SDRAM

HY5FS123235AFCP
The POD Slave I/O cell is comprised of a 40 ohm driver and programmable terminator of 60, 120 or 240 ohms. The
Slave POD cells terminator is disabled when the output driver is enabled or any other Slave output driver is enabled.
The basic cell is shown in Figure 41.
Read to other Slave
VDDQ
60 Ohm Terminator
Enabled when receiving
Output Data
Output Enable
DQ
VSSQ
60 Ohm pull-up and 40 Ohm pull-down
when transmitting
Figure 41: Slave I/O Cell
The POD Master and Slave I/O cells are intended to have their driver and terminators combined together to minimize
the area needed to implement the cell and reduce input capacitance. This is possible by using six 240 Ohm driver/
terminator sub cells that are connected in parallel. The combinations used are as follows.
Table 25 POD I/O Sub Cells
# of 240 ohm Sub Cells Enabled
1
2
4
6
Resulting Impedance
240 Ohms
120 Ohms
60 Ohms
40 Ohms
Use
4 Slave loads
2 Slave loads
1 Slave load or Master terminator
Master or Slave Driver
Rev. 1.2 /June. 2008
66