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HY5FS123235AFCP Datasheet, PDF (64/74 Pages) Hynix Semiconductor – 512M (16Mx32) GDDR4 SDRAM | |||
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HY5FS123235AFCP
2.0V I/O Driver Value
The Driver and Termination impedances are derived from the following test conditions under worst case process
corners:
1. Nominal 2.0V (VDD/VDDQ)
2. Power the GDDR4 device and calibrate the output drivers and termination to eliminate process variation at 25Â.
3. Reduce temperature to 10Â recalibrate.
4. Reduce temperature to 0Â and take the fast corner measurement
5. Raise temperature to 75Â and recalibrate
6. Raise temperature to 85Â and take the slow corner measurement
7. Reiterate 2 to 6 with VDD/VDDQ 1.90V
8. Reiterate 2 to 6 with VDD/VDDQ 2.10V
9. All obtained Driver and Termination IV characteristics have to be bounded by the specified MIN and MAX IV
characteristics
Table 24 2.0V I/O Impedances
Pull-Down Characteristic at 40 ohms
Pull-up/Termination Characteristic at 60 ohms
Voltage (V)
MIN (mA)
MAX (mA)
Voltage (V)
MIN (mA)
MAX (mA)
0.1
2.25
2.75
0.1
-1.50
-1.83
0.2
4.50
5.50
0.2
-3.00
-3.67
0.3
6.75
8.25
0.3
-4.50
-5.50
0.4
9.00
11.00
0.4
-6.00
-7.33
0.5
11.25
13.75
0.5
-7.50
-9.17
0.6
13.50
16.50
0.6
-9.00
-11.00
0.7
15.75
19.25
0.7
-10.50
-12.83
0.8
18.00
22.00
0.8
-12.00
-14.67
0.9
20.25
24.75
0.9
-13.50
-16.50
1.0
22.50
27.50
1.0
-15.00
-18.33
1.1
24.75
30.25
1.1
-16.50
-20.17
1.2
27.00
33.00
1.2
-18.00
-22.00
1.3
29.25
35.75
1.3
-19.50
-23.83
1.4
31.50
38.50
1.4
-21.00
-25.67
1.5
33.75
41.25
1.5
-22.50
-27.50
1.6
36.00
44.00
1.6
-24.00
-29.34
1.7
38.25
46.75
1.7
-25.50
-31.17
1.8
40.50
49.50
1.8
-27.00
-33.00
1.9
42.00
50.03
1.9
-28.99
-33.77
2.0
43.52
52.46
2.0
-30.22
-35.44
Note: These values aretarget values for the design The desigen does not need to meet these values
but it is redommended that the design fits these curves.
Rev. 1.2 /June. 2008
64
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