HY5FS123235AFCP Datasheet, PDF (53/74 Pages) Hynix Semiconductor – 512M (16Mx32) GDDR4 SDRAM

HY5FS123235AFCP
AC & DC Characteristics
All GDDR4 SDRAMs are designed for 1.8V typical voltage supplies but may optionally support 1.5V typical voltage sup
plies. The GDDR4 SDRAM vendor may restrict VDD and VDDQ combinations. The supported VDD and VDDQ will be
vendor specific. The interface of GDDR4 with 1.8V VDDQ will follow the POD18 specification and GDDR4 SDRAMs
with 1.5V VDDQ will follow the POD15 specification.
Table 17 DC Operating Conditions (Recommanded operating condition; 0°C <= TC <= 85°C)
POD18
Parameter
Symbol Min Typ Max Unit Note
Device Supply Volatage/
Output Supply Voltage
VDD/ ^{1.710 1.8 1.890 V}
1
VDDQ
1.90
2.0
2.10
V
1
Reference Voltage
VREF
0.69
*VDDQ
0.71
*VDDQ
V
2
DC Input Logic HIGH Voltage
VIH(DC)
VREF
+0.15
V
DC Input Logic LOW Voltage
VIL(DC)
VREF
-0.15
V
Input Leakage Current
Any Input 0V <= VIN <= VDD
I1
-5
(All other pins not under test = 0V)
5
uA
Output Leakage Current
(DQs are disabled;
oV < = Vout <= VDDQ)
Ioz
-5
5
uA
Output Logic LOW Voltage
VOL(DC)
0.76
V
Notes:
1. GDDR4 SDRAM is designed to tolerate PCB designs with separate VDD and VDDQ power regulators.
2. AC noise in the system is estimated at 50mV pk-pk for the purpose of DRAM design
Table 18 AC Operating Conditions (Recommanded operating condition; 0°C <= TC <= 85°C)
Parameter
Symbol
AC Input Logic HIGH Voltage VIH (AC)
AC Input Logic LOW Voltage VIL (AC)
Min
VREF
+0.25
POD18
Typ
Max
VREF
-0.25
Unit Note
V
V
Rev. 1.2 /June. 2008
53