HY5FS123235AFCP Datasheet, PDF (41/74 Pages) Hynix Semiconductor – 512M (16Mx32) GDDR4 SDRAM

HY5FS123235AFCP
CLOCKING, DATA CAPTURE
Data Capture
The Data Strobe (DQS) functionality for GDDR4 SDRAMs includes both a uni-directional, single-ended read strobe per
byte, and a uni-directional, single-ended write strobe per byte.
Write Data Strobe (WDQS) is center-aligned with Write Data and Read Data Strobe(RDQS) is edge-aligned with Read
Data. WDQS0 is assigned to DQ0~DQ7 and DM0, WDQS1;DQ8~DQ15 and DM1, WDQS2;DQ16~DQ23 and DM2,
WDQS3;DQ24~DQ31 and DM3. RDQS0 is assigned to DQ0~DQ7, RDQS1;DQ8~DQ15, RDQS2;DQ16~DQ23,
RDQS3;DQ24~DQ31.
WDQS
Vref = 0.7VDDQ
Write Data
Vref = 0.7VDDQ
t_DS t_DH
RDQS
Read Data
t_DQSQ
t_QH
Vref = 0.7VDDQ
Vref = 0.7VDDQ
Figure 28: WDQS and RDQS
Rev. 1.2 /June. 2008
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