HY5FS123235AFCP Datasheet, PDF (52/74 Pages) Hynix Semiconductor – 512M (16Mx32) GDDR4 SDRAM

HY5FS123235AFCP
OPERATING CONDITIONS
Absolute Maximum Ratings
Voltage on Vdd Supply
Relative to Vss................................................... -0.5V to +2.5V
Voltage on VddQ Supply
Relative to Vss .................................................. -0.5V to +2.5V
Voltage on Vref and Inputs
Relative to Vss .................................................. -0.5V to +2.5V
Voltage on I/O Pins
Relative to Vss .................................................. -0.5V to VddQ +0.5V
Storage Temperature (plastic) ............................ -55 to +150
Short Circuit Output Current ................................ 50mA
*Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and
functional operation of the device at these or any other conditions above those indicated in the operational sections of
this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Table 16 Capacitance
PARAMETER
Input/Output Capacitance: DQs, DQS, DM
Input Capacitance: Command, Address and CKE#
Input Capacitance: CK, CK#
SYMBOL
Ci0
Ci1
Ci2
MIN
1.0
1.0
1.0
MAX
2.0
2.5
2.0
UNITS
pF
pF
pF
NOTES
Rev. 1.2 /June. 2008
52