HY5FS123235AFCP Datasheet, PDF (56/74 Pages) Hynix Semiconductor – 512M (16Mx32) GDDR4 SDRAM

HY5FS123235AFCP
Table 20 IDD SPECIFICATIONS AND CONDITIONS
(Recommanded operating condition; 0°C <= TC <= 85°C)
PARAMETER/CONDITION
SYMBOL -06* -07* -08
OPERATING CURRENT: One bank; Active Precharge; t_RC
(MIN); t_CK= t_CK (MIN);
DQ, DM, and DQS inputs changing twice per clock cycle;
Address and control inputs changing once per clock cycle;
IDD0
880 800 680
OPERATING CURRENT: One bank; Active Read Precharge;
Burst = 8; t_RC (MIN); t_CK = t_CK (MIN); I(OUT) = 0mA;
Address and control inputs changing once per clock cycle;
WL = 4
IDD1
800 730 590
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks
idle; Power-down mode;
IDD2P 270 260 240
t_CK = t_CK (MIN); CKE# = HIGH
IDLE STANDBY CURRENT: CS# = HIGH;
All banks idle; t_CK = t_CK (MIN); CKE# = LOW; inputs
changing once per clock cycle
IDD2N 600 550 480
ACTIVE POWER-DOWN STANDBY CURRENT: One bank
active; Power-down mode;
t_CK = t_CK (MIN); CKE# = HIGH; WL=4
IDD3P 280 270 250
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE# = LOW;
One bank; Active Precharge;
t_RC = t_RAS (MAX); t_CK = t_CK (MIN); DQ, DM, and DQS inputs IDD3N 710 650 570
changing twice per clock cycle; Address and other control
inputs changing once per clock cycle
OPERATING CURRENT: Burst = 8; Reads; Continuous
burst; One bank active; Address and control inputs
changing once per clock cycle; t_CK = t_CK (MIN); Iout =
0mA; WL = 4
IDD4R 1450 1300 1100
OPERATING CURRENT: Burst = 8; Writes; Continuous
burst; One bank active; Address and control inputs
changing once per clock cycle; t_CK = t_CK (MIN); DQ, DM,
and DQS inputs changing twice per clock cycle; WL = 4
IDD4W 1320 1210 1020
AUTO REFRESH CURRENT: t_RC = t_RFC(min);
All banks active
IDD5 1050 970 830
SELF REFRESH CURRENT: CKE# = HIGH
IDD6
35
35
30
Operating bank interleave read current
IDD7 1020 940 810
Unit:mA
-09 NOTES
620 23
540 23
230
440
240
530 23
1000
920
760 23
30
740
***) 1. Measured condition is Outputs open and ODT off.
2. IDD values of (-06*) and (-07*) are measured at 2.0V and the others are measures at 1.8V.
Rev. 1.2 /June. 2008
56