MC908KX2MDWE Datasheet, PDF (192/210 Pages) Freescale Semiconductor, Inc – High-performance M68HC08 architecture, Fully upward-compatible object code with M6805, M146805, and M68HC05 Families

Electrical Specifications
17.11 Memory Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
RAM data retention voltage
FLASH program bus clock frequency
V_RDR
—
1.3
—
1
—
—
V
—
MHz
FLASH read bus clock frequency
FLASH page erase time
<1 K cycles
>1 K cycles
f_Read(1)
0
—
8M
Hz
t_Erase
0.9
1
1.1
ms
3.6
4
5.5
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
t_MErase
t_NVS
t_NVH
t_NVHL
t_PGS
t_PROG
4
—
10
—
5
—
100
—
5
—
30
—
—
ms
—
µs
—
µs
—
µs
—
µs
40
µs
FLASH return to read time
FLASH cumulative program HV period
t_RCV(2)
t_HV(3)
1
—
—
µs
—
—
4
ms
FLASH endurance⁽⁴⁾
—
10 k
100 k
—
Cycles
FLASH data retention time⁽⁵⁾
—
15
100
—
Years
1. f_Read is defined as the frequency range for which the FLASH memory can be read.
2. t_RCV is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clear-
ing HVEN to 0.
3. t_HV is defined as the cumulative high voltage programming time to the same row before next erase.
t_HV must satisfy this condition: t_NVS + t_NVH + t_PGS + (t_PROG x 64) ≤ t_HV maximum.
4. Typical endurance was evaluated for this product family. For additional information on how Freescale defines Typical En-
durance, please refer to Engineering Bulletin EB619.
5. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618.
MC68HC908KX8 • MC68HC908KX2 • MC68HC08KX8 Data Sheet, Rev. 2.1
192
Freescale Semiconductor