TA1360ANG Datasheet, PDF (81/108 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

TA1360ANG
Note
No.
Characteristics
T13 ABL gain
SW3
C
T14 RGB output
C
mode
SW4
B
B
SW5
B
B
Test Conditions
SW Mode
SW33 SW34 SW35
A
A
A
SW37
A
SW38
A
SW39
A 1.
Test Method
Apply 6.5-V external voltage to pin 53.
2. Set subaddress (1B) data to (00).
3. Set brightness data to maximum.
4. Apply 4.5-V external voltage to pin 53.
5. Change subaddress (1B) data to (00), (04), (08), (0C), (10), (14), (18), and (1C).
Repeat the step 3 above, and measure VABL11, VABL12, VABL13, VABL14, VABL15,
VABL16, VABL17, and VABL18.
6. ABL_G1 = VABL11 − VABL10
ABL_G2 = VABL12 − VABL10
ABL_G3 = VABL13 − VABL10
ABL_G4 = VABL14 − VABL10
ABL_G5 = VABL15 − VABL10
ABL_G6 = VABL16 − VABL10
ABL_G7 = VABL17 − VABL10
ABL_G8 = VABL18 − VABL10
A
A
A
A
A
A 1. Adjust brightness data so that picture period voltage of pin 43 is 2.4 V.
2. Set subaddress (1B) data to (01).
3. Measure pins 43, 42, and 41 picture period voltage, V_43R, V_42R, and V_41R.
4. Set subaddress (1B) data to (02), and repeat the step 3 above. Measure pins 43, 42, and 41
picture period voltage, V_43G, V_42G, and V_41G.
5. Set subaddress (1B) data to (03), and repeat the step 3 above. Measure pins 43, 42, and 41
picture period voltage, V_43B, V_42B, and V_41B.
81
2003-01-21