TA1360ANG Datasheet, PDF (55/108 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

Note No.
Characteristics
P16 Dark area detection
sensitivity
TA1360ANG
SW1
A
Test Conditions
SW Mode
SW2 SW3 SW7
B
A
A
SW56
Test Method (Test condition: V_CC = 9 V/2 V, Ta = 25 ± 3°C)
OPEN 1. Input the signal whose picture period amplitude is 0.18 V to #3 as shown in the figure below.
2. Measure #1 pin voltage DAMIN, DACEN, and DAMAX [V] when dark area detection sensitivity [1D] is set to
MIN [00], CEN [04] and MAX [07].
#3
0.18 V
#1
DAMINŋCENŋMAX [V]
55
2003-01-21