TA1360ANG Datasheet, PDF (45/108 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

Note No.
Characteristics
P05 Black stretch characteristic
switch
TA1360ANG
SW1
A
Test Conditions
SW Mode
SW2 SW3 SW7
A
C
B
SW56
Test Method (Test condition: V_CC = 9 V/2 V, Ta = 25 ± 3°C)
OPEN 1. Set SW2 to A (maximum gain), black stretch point 1 (18) to maximum (E0), subaddress (1C) data to (00) and
(1E) data to (08).
2. Apply 0 V to #1 and connect external power supply PS to #3. Set PS to V₃ + 0.7 V, and adjust unicolor so
that DC level of #43 is +1.0 V. Plot voltage change S4 of #43 (voltage in picture period).
3. Determine intersection points (V_BSC1 and V_BSC2) of S2 and S4 obtained from the plot in black stretch start
point 1. Then calculate P_BSC1 and P_BSC2 using following equation.
4. Set black stretch characteristic switch subaddress data (1C)/(1E) to (20)/(00) and (20)/(08) respectively. As
described in steps 2 and 3,
P_BSC3, P_BSC4, P_BSC5 and
determine
P_BSC6.
intersection
points
(V_BSC3,
V_BSC4,
V_BSC5
and
V_BSC6)
and
calculate
P_BSC* = (V_BSC* [V] − V₄₃ [V]) ÷ 1.0 × 100 [(IRE)]
#43
V_BSC2
V₄₃
V3
V_BSC1
S2
V₃ + 0.7 V ^#3
S4 Black stretch characteristic switch ON
45
2003-01-21