TA1360ANG Datasheet, PDF (46/108 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

Note No.
Characteristics
P06 Black stretch area
reinforcement current
TA1360ANG
SW1
B
Test Conditions
SW Mode
SW2 SW3 SW7

C
B
SW56
Test Method (Test condition: V_CC = 9 V/2 V, Ta = 25 ± 3°C)
ON 1. Connect external power supply PS1 to #3.
2. Leave SW2 open, put an ammeter between SW2A and #2, connect external power supply PS2 to SW2A, set
PS1 to 5.7 V, and set PS2 to 5 V.
3. Measure current value IBSA0 and IBSA1 when bus data of black stretch area reinforcement [18] is set to ON
[80] and OFF [81]. Calculate IBSA using the following equation.
IBSA = IBSA0ʵIBSA1
SW2A
A
PS2
µ ̖mmeter
5V
P07 D.ABL detection voltage
B
A
C
B OPEN 1. Set D.ABL sensitivity to maximum (11), and black stretch point 1 to OFF (000).
2. Connect external power supply PS to #53 and decrease voltage from 6.5 V.
3. Repeat 2 when D.ABL detection voltage is changed to 00, 01, 10, and 11. At the moment when #56 picture
period changes to Low, measure respective PS voltages V₀₀, V₀₁, V₁₀, and V₁₁.
4. Calculate voltage differences between V₀₀ and V₀₁ (DV₀₁), between V₀₀ and V₁₀ (DV₁₀), and between V₀₀
and V₁₁ (DV₁₁)
DV_*** = V₀₀ − V₀₁ (V₁₀, V₁₁)
#56 undetected
#56 detected
#2 waveform
46
2003-01-21