TA1360ANG Datasheet, PDF (71/108 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

Note No.
Characteristics
S04 Green stretch
TA1360ANG
SW3
C
Test Conditions
SW Mode
SW4 SW5
A
A
SW7
Test Method (Test condition: V_CC = 9 V/2 V, Ta = 25 ± 3°C)
 1. Input signal B as shown in the figure below from TP4 (Cb/Pb1 input), and signal A from TP5 (Cr/Pr input).
SW33
A
SW38
A
SW34
A
SW39
A
SW35
A


SW37 ^2.
A ^3.
 ^4.
5.

6.
Set brightness [06] to maximum (FF).
Measure amplitudes A, B, C, D, and E at #42 (Gout) as shown in the figure below. (A00 to E00)
Set green stretch [14] data to (08), and repeat the step 3 above. (A01 to E01)
Set green stretch [14] data to (10), and repeat the step 3 above. (A10 to E10)
Set green stretch [14] data to (18), and repeat the step 3 above. (A11 to E11)
7. Green stretch gain is calculated by the following equations
GrA01 = ^A01
A00
GrB01= ^B01
B00
GrC01 = ^C01
C00
GrD01 = ^D01
D00
GrE01= ^E01
E00
GrA10 = ^A10
A00
GrB10 = ^B10
B00
GrC10 = ^C10
C00
GrD10 = ^D10
D00
GrE10 = ^E10
E00
GrA11= ^A11
A00
GrB11 = ^B11
B00
GrC11 = ^C11
C00
GrD11 = ^D11
D00
GrE11= ^E11
E00
0.05 Vp-p
Signal A
Signal B
±0 Vp-p
−0.05 Vp-p
−0.087 Vp-p
−0.1 Vp-p
±0 Vp-p
−0.07 Vp-p
−0.122 Vp-p −0.122 Vp-p
−0.14 Vp-p
B
C
A
DE
Pin 42
150° 180° 210° 240° 270°
71
2003-01-21