TA1360ANG Datasheet, PDF (51/108 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

Note No.
Characteristics
P12 Dark area static Yγ gain
TA1360ANG
SW1
A
Test Conditions
SW Mode
SW2 SW3 SW7
B
C
B
SW56
Test Method (Test condition: V_CC = 9 V/2 V, Ta = 25 ± 3°C)
OPEN 1. Connect external power supply PS1 to #3, external power supply PS2 to TP1, and set PS2 to 0 V.
2. Set dark area dynamic Yγ gain [1C] to MIN [03], and dark area static Yγ gain [1C] to OFF [03].
3. Set PS1 to V₃ [V], and measure #43 picture period voltage VSGOFF1 [V].
4. Set PS1 to VDGP [V], and measure #43 picture period voltage VSGOFF2 [V].
5. Set dark area static Yγ gain [1C] to MAX [1F], PS1 to VDGP [V], measure #43 picture period voltage
VSGMAX, and calculate GDSGMAX using the following equations.
VSGMAX − VSGOFF2 = A
VSGOFF2 − VSGOFF1 = B
GDSGMAX = 20 × log [B/(B - A)] [dB]
#43 voltage [V]
ON
VSGMAX
VSGOFF2
OFF
VSGMAX − VSOFF2 = A
VSGOFF1
V₃ VDGP
#3 voltage [V]
V₃ + 0.7 V
(100IRE)
6. Set dark area static Yγ gain [1C] to MIN [07], PS1 to VDGP [V], measure #43 picture period voltage VSGMIN,
and calculate GDSGMIN using the following equation.
GDSGMIN = 20 × log [(VSGMIN − VSGOFF1)/(VSGOFF2 − VSGOFF1)] [dB]
#43 voltage [V]
OFF
VSGOFF2
VSGMIN
VSGOFF1
ON
V_{3 VDGP}
51
VSGOFF2 − VSGOFF1
VSGMIN − VSGOFF1
#3 voltage [V]
V₃ + 0.7 V
(100IRE)
2003-01-21