TA1360ANG Datasheet, PDF(101/108 Page) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

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TA1360ANG Datasheet, PDF (101/108 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

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TA1360ANG

Note Characteristics

Test Conditions

V03 Vertical black peak

detection pulse

1. Repeat the step 1 of Note# V01. Set SW2 to C, and SW3 to C.

2. Input signal F (shown in the figure below) to TP 15.

3. Measure phase differences VBPP0E and VBPP0S according to #2 output waveform.

4. Set subaddress (03) data to 01H, 02H, 03H, 04H, 05H, and 06H. Measure phase differences

VBPP1E, VBPP1S, VBPP2E, VBPP2S, VBPP3E, VBPP3S, VBPP4E, VBPP4S, VBPP5E,

VBPP5S, VBPP6E, and VBPP6S as in the step 3 above.

Signal F (TP 15

waveform input)

#24

input waveform

#2 waveform

262.5H to 1125H

VBPPE

VBPPS

V04 Vertical blanking stop 1. Repeat the step 1 of Note# V01.

phase

2. Input signal F (shown in the figure below) to TP 15.

3. Set subaddress (03) data to 00H and F0H. Measure blanking stop phase VBLKMIN and

VBLKMAX according to #43 output waveform.

Signal F (TP 15

waveform input)

#24

input waveform

VBLK

1125H

#24 input

101

2003-01-21

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