TA1360ANG Datasheet, PDF (22/108 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

TA1360ANG
Maximum Ratings (Ta = 25°C)
Characteristics
Supply voltage
Input pin signal voltage
Power dissipation
Power dissipation reduction rate
depending on temperature
Operating temperature
Storage temperature
Supply voltage (pins 19, 40, and 55)
Symbol
V_CCmax
e_inmax
P_D (Note 3)
1/θja
T_opr
T_stg
min
typ.
max
PCB A
12
9
2551
20.4
−20 to 65
−55 to 150
8.5
8.8
9.1
Rating
PCB B
12
9
2717
21.7
−20 to 65
−55 to 150
8.7
9.0
9.3
PCB C
12
9
3378
27.0
−20 to 65
−55 to 150
8.7
9.0
9.3
Unit
V
Vp-p
mW
mW/°C
°C
°C
V
Note 3: See the following Figure A.
Note, however, that the conditions apply only to the case where the device is mounted on board A (180 mm
× 125 mm × 1.6 mm, one-sided); board B (329 mm × 249 mm × 1.6 mm, two-sided); or board C (276 mm ×
192 mm × 1.6 mm, six-layered). When mounting the IC, select boards no smaller than these. When using
under the conditions of board A, set the IC’s power supply voltage (pins 19, 40, 55) to 8.8 V (±0.3 V).
Because the IC’s thermal capacity margin is narrow, when designing a set, incorporate heat discharge
features into the design. Note that the power dissipation varies widely depending on the board mounting
conditions.
3378
Printed Circuit Board B
2717
Printed Circuit Board C
2551
2297
1848
1735
Printed Circuit
Board A
0
0 25
65
150
Ambient temperature Ta (°C)
Figure A Power Dissipation Reduction Curve
22
2003-01-21