TA1360ANG Datasheet, PDF (44/108 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

Note No.
Characteristics
P04 Black stretch start point 2
TA1360ANG
SW1
A
Test Conditions
SW Mode
SW2 SW3 SW7
A
A
B
SW56
Test Method (Test condition: V_CC = 9 V/2 V, Ta = 25 ± 3°C)
ON 1. Set black stretch point 1 to OFF (000), apply 0 V to #1, input TG7 LINEARITY to TPA, adjust amplitude on #3
as shown in the figure below, set unicolor to center (1000000), and measure amplitude of #43 (R OUT),
V_P43.
2. Set black stretch point 1 to 001 (black stretch ON), connect external power supply PS to #56, and monitor
#43 (R OUT).
3. Set black stretch start point 2 data to minimum (00). When PS is V₅₆ (APL 0%), and V₅₆ + 1.0 V (APL
100%), determine black stretch start point difference ∆V₀₀ as shown in the figure below. (Monitor input
waveform and output waveform with an oscilloscope, adjust the both waveforms to have the same amplitude
(gradient), and compare them to determine the bend point of the output.)
4. Set black stretchstart point 2 data to maximum (11), determine black stretch start point difference ∆V1₁.
5. Calculate following equations.
P_BS1 = (∆V₀₀/V_P43) × 100
P_BS2 = (∆V₁₁/V_P43) × 100
LINEARITY
0.7 V_p-p
0.3 V_p-p
#3 waveform (linearity)
APL 100%
APL 0%
∆V_***
#43 (R OUT)
44
2003-01-21