TA1360ANG Datasheet, PDF (26/108 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

Picture Quality (Sharpness) Block
Characteristics
Y input dynamic range
Black detection level shift
Black stretch amp maximum gain
Black stretch start point 1
Black stretch start point 2
Black stretch characteristic switch
Black stretch area reinforcement
current
D.ABL detection voltage
D.ABL sensitivity
Black level correction
Dark area Yγ correction point
Dark area dynamic Yγ gain
Dark area static Yγ gain
Light area Yγ correction point
Light area dynamic Yγ gain
Light area static Yγ gain
Dark area detection sensitivity
DC restoration rate
DC restoration point
DC restoration limit
Symbol
D_RY
V_B
V_B3
G_BS
P_BST1
P_BST2
P_BS1
P_BS2
P_BSC1
P_BSC2
P_BSC3
P_BSC4
P_BSC5
P_BSC6
IBSA
Test
Circuit















DV₀₁

DV₁₀

DV₁₁

S_DAMIN

S_DAMAX

BLC

P_DGP

G_DDGMAX

G_DSGMIN

G_DSGMAX

LPG

GLDG

G_LSGMIN

G_LSGMAX

DAMIN

DACEN

DAMAX

ADT₁₀₀

ADT₁₃₅

ADT₆₅

V_DT0

V_DT1

P_DTL60

P_DTL75

P_DTL87

P_DTL100

TA1360ANG
Test Condition
Min

0.7
−15
(Note P01)
35
(Note P02) 2.4
20
(Note P03)
50
0
(Note P04)
14
26
−8
26
(Note P05)
−5.5
26
−3.5
(Note P06) 13
80
(Note P07) 240
380

(Note P08)
0.25
(Note P09) 4.5
(Note P10) 25
(Note P11) 5.5
−6.5
(Note P12)
2
(Note P13) 64
(Note P14) 1.1
0.3
(Note P15)
1.4
0.25
(Note P16) 0.88
0.95
0.9
(Note P17) 1.2
0.55
−5
(Note P18)
47
64
74
(Note P19)
74
74
Typ.
1.0
10
45
2.8
25
55
5
21
28
−6
28
−3
28
−2
18
120
280
420
0.01
0.28
6.5
28
6
−5
2.4
74
1.7
0.6
1.7
0.3
0.98
1.05
1.1
1.35
0.70
0
49
67
77
80
80
Max Unit
1.5 Vp-p
15
mV
55
3.2
dB
35
IRE
60
10
IRE
30
30
−4
30
IRE
−1
30
−0.5
23
µA
160
320 mV
460
0.02
V/V
0.31
8.5 IRE
33 IRE
6.5
dB
−4
dB
2.6
80 IRE
2.3
dB
0.9
dB
2.3
0.37
1.08
V
1.15
1.2
1.5 times
0.85
5
%
55
70
80
%
82
82
26
2003-01-21