TA1360ANG Datasheet, PDF (80/108 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

TA1360ANG
Note
No.
Characteristics
T11 ACL
characteristic
SW3
A
T12 ABL point
C
SW4
B
B
SW5
B
B
Test Conditions
SW Mode
SW33 SW34 SW35
A
A
A
SW37
A
SW38
A
SW39
A 1.
2.
Test Method
Input signal 1 (f₀ = 100 kHz, picture period amplitude 0.2 Vp-p) from pin 3.
Measure pin 43 picture period amplitude, vACL1.
3. Apply “DC voltage of pin 53 − 0.8 V” to pin 53 from external power supply and measure pin
43-picture period amplitude, vACL2.
4. Apply “DC voltage of pin 53 − 1.3 V” to pin 53 from external power supply and measure pin
43-picture period amplitude, vACL3.
5. Calculate the following equations.
ACL₁ = −20 × log (vACL2/vACL1)
ACL₂ = −20 × log (vACL3/vACL1)
A
A
A
A
A
A 1. Measure DC voltage of pin 53, VABL1.
2. Set subaddress (1B) data to (1C).
3. Apply external voltage to pin 53, and decrease voltage from 6.5 V. When voltage of pin 43
starts changing, measure pin 53 voltage, VABL2.
4. Change subaddress (1B) data to (3C), (5C), (7C), (9C), (BC), (DC), and (FC) under the
status of the step 3 above. Measure pin 53 voltage: VABL3, VABL4, VABL5, VABL6, VABL7,
VABL8, and VABL9.
5. ABL_P1 = VABL2 − VABL1 ABL_P5 = VABL6 − VABL1
ABL_P2 = VABL3 − VABL1 ABL_P6 = VABL7 − VABL1
ABL_P3 = VABL4 − VABL1 ABL_P7 = VABL8 − VABL1
ABL_P4 = VABL5 − VABL1 ABL_P8 = VABL9 − VABL1
80
2003-01-21