TA1360ANG Datasheet, PDF (50/108 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

Note No.
Characteristics
P11 Dark area dynamic Yγ gain
TA1360ANG
SW1
A
Test Conditions
SW Mode
SW2 SW3 SW7
B
C
B
SW56
Test Method (Test condition: V_CC = 9 V/2 V, Ta = 25 ± 3°C)
OPEN 1. Connect external power supply PS1 to #3, external power supply PS2 to TP1, and set PS2 to 0 V.
2. Set dark area dynamic Yγ gain [1C] to MIN [03], and dark area static Yγ gain [1C] to 0dB [17].
3. Set PS1 to V₃ [V], and measure #43 picture period voltage VDDGV₃ [V].
Set PS1 VDGP [V], and measure #43 picture period voltage VDDGMIN [V].
4. Set dark area dynamic Yγ gain [1C] to MAX [D7], PS2 to 1.2 V, measure voltage VDDGMAX [V] of #43
picture period when PS1 is VDGP [V], and calculate the following equations.
VDDGMAX − VDDGMIN = A
VDDGMIN − VDDGV₃ = B
GDDGMAX = 20 log [B/(B-A)] [dB]
#43 voltage [V]
ON
VDDGMAX
VDDGMIN
VDDGV₃
V₃ VDGP
OFF
VDDGMAX − VDDGMIN = A
VDDGMIN − VDDGV₃ = B
#3 voltage [V]
V₃ + 0.7 V
(100IRE)
50
2003-01-21