TA1360ANG Datasheet, PDF (77/108 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

TA1360ANG
Note
No.
Characteristics
T04 White peak
slice level
SW3
C
T05 Black peak
C
slice level
T06 RGB output
C
S/N
T07 Halftone
A
characteristic
SW4
B
B
B
B
SW5
B
B
B
B
Test Conditions
SW Mode
SW33 SW34 SW35 SW37 SW38 SW39
A
A
A
A
A
A 1. Set subcontrast to maximum.
Test Method
2. Apply external power supply to pin 3 and gradually increase voltage from 5.8 V.
3. When picture period of pin 43 is clipped, measure pin 43 picture period amplitude voltage,
V_wps1.
4. Change subaddress (0C) data to (FC) and repeat the steps 1 to 3 above. (V_wps2)
A
A
A
A
A
A 1. Apply external power supply to pin 3 and gradually decrease voltage from 5.8 V.
2. When picture periods are clipped, measure pins 41, 42, and 43 voltage, V_bps.
A
A
A
A
A
A 1. Adjust brightness data so that picture period voltage of pin 41 is 2.4 V.
2. Set color data to minimum.
3. Measure noise levels n41-, n42-, and n43-Vp-p in picture period of pin 41, 42, and 43 with an
oscilloscope.
4. Calculate S/N.
N₄₁ = −20 × log [2.3/(0.2 × n41)]
N₄₂ = −20 × log [2.3/(0.2 × n42)]
N₄₃ = −20 × log [2.3/(0.2 × n43)]
A
A
A
A
A
A 1. Input signal 1 (f₀ = 100 kHz, picture period amplitude 0.2 Vp-p) from pin 3.
2. Measure pin 41 picture period amplitude v41A.
3. Apply 1.5 V to pin 52 from external power supply.
4. Measure pin 41 picture period amplitude v41B
5. Calculate the following equation. G_HT1 = v41B/v41A
6. Stop applying voltage to pin 52. Set subaddress (1A) to data (E2) and measure pin 41-picture
period amplitude, v41C.
7. Calculate the following equation. G_HT2 = v41C/v41A
77
2003-01-21