TA1360ANG Datasheet, PDF (49/108 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

TA1360ANG
Note No.
Characteristics
P10 Dynamic Yγ correction point
SW1
A
Test Conditions
SW Mode
SW2 SW3 SW7
B
C
B
SW56
Test Method (Test condition: V_CC = 9 V/2 V, Ta = 25 ± 3°C)
OPEN 1. Connect external power supply PS1 to #3, PS2 to TP1, and set PS2 to 0 V.
2. Set dark area dynamic Yγ gain VS dark area to MIN (00), static Yγ gain1 to OFF (000).
3. Increase PS1 from V₃ [V] to V₃ [V] + 0.7 V and plot voltage change of #43 picture period. Take 0 for V₃ [V]
when the change is plotted. (V₃ is pin voltage of pin 3)
4. Set dark area dynamic Yγ gain VS dark area max (11), static Yγ gain1 to max (111) and PS2 to 1.2 V.
5. Increase PS1 from V₃ [V] to V₃ [V] + 0.7 V and plot voltage change of #43 picture period.
6. Measure VDGP by the following figure, and P_DGP using the following equation.
DGP = (VDGP [V] − V₃ [V])/0.7 [V] × 100
#43 voltage [V]
ON
OFF
V₃
VDGP
#3 voltage [V]
V₃ + 0.7V
(100 IRE)
49
2003-01-21