MSP432P401R Datasheet, PDF (67/157 Pages) Texas Instruments – Mixed-Signal Microcontrollers

www.ti.com
MSP432P401R, MSP432P401M
SLAS826B – MARCH 2015 – REVISED FEBRUARY 2016
From a physical perspective the flash memory comprises of two banks, with the main and information
memory regions divided equally between the two banks. This permits application to carry out a
simultaneous read or execute operation from one bank while the other bank may be undergoing a
program or erase operation.
The memory map of flash on MSP432P401x devices is shown in Figure 6-5.
Figure 6-5. Flash Memory Map
6.3.1.1 Flash Main Memory (0x0000_0000 to 0x0003_FFFF)
The flash main memory on MSP432P401x devices can be up to 256KB. Flash main memory consists of
up to 64 sectors of 4KB each, with a minimum erase granularity of 4KB (1 sector). The main memory can
be viewed as two independent, identical banks of up to 128KB each, allowing simultaneous read/execute
from one bank while the other bank is undergoing program/erase operation.
Copyright © 2015–2016, Texas Instruments Incorporated
Submit Documentation Feedback
Product Folder Links: MSP432P401R MSP432P401M
Detailed Description
67