HYB18T512400AF Datasheet, PDF (89/117 Pages) Infineon Technologies AG – 512-Mbit DDR2 SDRAM

HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
512-Mbit DDR2 SDRAM
AC & DC Operating Conditions
5.8
Power & Ground Clamp V-I Characteristics
Power and Ground clamps are provided on address The V-I characteristics for pins with clamps is shown in
(A[13:0], BA[11:0]), RAS, CAS, CS, WE, and ODT pins. Table 41.
Table 41 Power & Ground Clamp V-I Characteristics
Voltage across clamp (V)
Minimum Power Clamp
Current (mA)
0.0
0
0.1
0
0.2
0
0.3
0
0.4
0
0.5
0
0.6
0
0.7
0
0.8
0.1
0.9
1.0
1.0
2.5
1.1
4.7
1.2
6.8
1.3
9.1
1.4
11.0
1.5
13.5
1.6
16.0
1.7
18.2
1.8
21.0
Minimum Ground Clamp Current (mA)
0
0
0
0
0
0
0
0
0.1
1.0
2.5
4.7
6.8
9.1
11.0
13.5
16.0
18.2
21.0
5.9
Overshoot and Undershoot Specification
Table 42 AC Overshoot / Undershoot Specification for Address and Control Pins
Parameter
DDR2-400 DDR2-533 DD2-667
Maximum peak amplitude allowed for overshoot area 0.9
0.9
0.9
Maximum peak amplitude allowed for undershoot area 0.9
0.9
0.9
Maximum overshoot area above V_DD
Maximum undershoot area below V_SS
1.33
1.00
0.80
1.33
1.00
0.80
Unit
V
V
V.ns
V.ns
Data Sheet
89
Rev. 1.3, 2005-01
09112003-SDM9-IQ3P