HYB18T512400AF Datasheet, PDF (87/117 Pages) Infineon Technologies AG – 512-Mbit DDR2 SDRAM

HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
512-Mbit DDR2 SDRAM
AC & DC Operating Conditions
0,00
-20,00
-40,00
-60,00
Minimum
IBIS Target Low
IBIS Target High
Maximum
-80,00
0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2
VDDQ to VOUT (V)
Figure 68 Reduced Strength Default Pull-up Driver Diagram
Table 39 Reduced Strength Default Pull–down Driver Characteristics
Voltage (V) Pull-down Driver Current [mA]
Min.¹⁾
IBIS Target low²⁾
IBIS Target high²⁾
Max.³⁾
0.0
0.00
0.00
0.00
0.00
0.1
1.72
3.24
4.11
4.77
0.2
3.44
6.25
8.01
9.54
0.3
5.16
9.03
11.67
14.31
0.4
6.76
11.52
15.03
19.08
0.5
8.02
13.66
18.03
23.85
0.6
8.84
15.41
20.61
28.62
0.7
9.31
16.77
22.71
33.33
0.8
9.64
17.74
24.35
37.77
0.9
9.89
18.83
25.56
41.73
1.0
10.09
18.80
26.38
45.21
1.1
10.26
19.06
26.90
48.21
1.2
10.41
19.23
27.24
50.73
1.3
10.54
19.35
27.47
52.77
1.4
10.66
19.46
27.64
54.42
1.5
10.77
19.56
27.78
55.80
1.6
10.88
19.65
27.89
57.03
1.7
10.98
19.73
27.97
58.23
1.8
—
19.80
28.02
59.43
1.9
—
—
—
60.63
1) The driver characteristics evaluation conditions are Minimum 95 °C (T_CASE), V_DDQ = 1.7 V, slow-slow process
2) The driver characteristics evaluation conditions are Nominal Default 25 °C (T_CASE), V_DDQ = 1.8 V, typical process
3) The driver characteristics evaluation conditions are Maximum 0 °C (T_CASE). V_DDQ = 1.9 V, fast-fast process
Data Sheet
87
Rev. 1.3, 2005-01
09112003-SDM9-IQ3P