HYB18T512400AF Datasheet, PDF (116/117 Pages) Infineon Technologies AG – 512-Mbit DDR2 SDRAM

10
Product Namenclature
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
512-Mbit DDR2 SDRAM
Product Namenclature
Table 62 Nomenclature Fields and Examples
Example for
Field Number
1
2
3
4
5
6
7
8
9
10
11
DDR2 DRAM
HYB 18
T
512 16
0
A
C
–3.7
Table 63
Field
1
2
3
4
DDR2 Memory Components
Description
INFINEON
Component Prefix
Interface Voltage [V]
DRAM Technology
Component Density [Mbit]
5+6
Number of I/Os
7
Product Variations
8
Die Revision
9
Package,
Lead-Free Status
10
Speed Grade
11
N/A for Components
Values
HYB
18
T
256
512
1G
40
80
160
0 .. 9
A
B
C
F
–3
–3S
–3.7
–5
Coding
Constant
SSTL1.8
DDR2
256 M
512 M
1 Gb
×4
×8
×16
look up table
First
Second
FBGA,
lead-containing
FBGA, lead-free
DDR2–667C 4–4–4
DDR2–667D 5–5–5
DDR2–533C 4–4–4
DDR2–400B 3–3–3
Data Sheet
116
Rev. 1.3, 2005-01
09112003-SDM9-IQ3P