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HYB18T512400AF Datasheet, PDF (86/117 Pages) Infineon Technologies AG – 512-Mbit DDR2 SDRAM
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
512-Mbit DDR2 SDRAM
AC & DC Operating Conditions
5.6
Reduced Output Drive Characteristics
A driver mode with reduced output drive characteristics can be selected by setting address bit A1 in the EMRS(1)
extended mode register to 1.
Table 38 Reduced Strength Default Pull-up Driver Characteristics
Voltage (V)
Pull-up Driver Current [mA]
Min.1)
IBIS Target low2)
IBIS Target high2)
Max.3)
0.0
0.00
0.00
0.00
0.00
0.1
–1.72
–3.20
–3.70
–4.77
0.2
–3.44
–6.20
–7.22
–9.54
0.3
–5.16
–9.04
–10.56
–14.31
0.4
–6.76
–11.69
–13.75
–19.08
0.5
–8.02
–14.11
–16.78
–23.85
0.6
–8.84
–16.27
–19.61
–28.62
0.7
–9.31
–18.16
–22.20
–33.33
0.8
–9.64
–19.77
–24.50
–37.77
0.9
–9.89
–21.10
–26.46
–41.73
1.0
–10.09
–22.15
–28.07
–45.21
1.1
–10.26
–22.96
–29.36
–48.21
1.2
–10.41
–23.61
–30.40
–50.73
1.3
–10.54
–24.61
–31.24
–52.77
1.4
–10.66
–24.64
–31.93
–54.42
1.5
–10.77
–25.07
–32.51
–55.80
1.6
–10.88
–25.47
–33.01
–57.03
1.7
–10.98
–25.85
–33.46
–58.23
1.8
—
–26.21
–33.89
–59.43
1.9
—
—
—
–60.63
1) The driver characteristics evaluation conditions are Minimum 95 °C (TCASE), VDDQ = 1.7 V, slow–slow process
2) The driver characteristics evaluation conditions are Nominal Default 25 °C (TCASE), VDDQ = 1.8 V, typical process
3) The driver characteristics evaluation conditions are Maximum 0 °C (TCASE). VDDQ = 1.9 V, fast–fast process
Data Sheet
86
Rev. 1.3, 2005-01
09112003-SDM9-IQ3P