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MC9S12E128CFUE Datasheet, PDF (567/606 Pages) Freescale Semiconductor, Inc – MC9S12E128 Data Sheet
Appendix A Electrical Characteristics
A.1.7 Operating Conditions
This chapter describes the operating conditions of the device. Unless otherwise noted those conditions
apply to all the following data.
NOTE
Instead of specifying ambient temperature all parameters are specified for
the more meaningful silicon junction temperature. For power dissipation
calculations refer to Section A.1.8, “Power Dissipation and Thermal
Characteristics”.
Table A-4. Operating Conditions
Rating
Symbol
Min
Typ
Max
Unit
I/O, Regulator and Analog Supply Voltage
Internal Logic Supply Voltage1
PLL Supply Voltage 1
VDD5
VDD
VDDPLL
2.97
2.35
2.35
3.3/5
2.5
2.5
5.5
V
2.75
V
2.75
V
Voltage Difference VDDX to VDDA
∆VDDX
–0.1
0
0.1
V
Voltage Difference VSSX to VSSR and VSSA
∆VSSX
–0.1
0
0.1
V
Oscillator
Bus Frequency2
fosc
0.5
—
fbus
0.25
—
16
MHz
25
MHz
Operating Junction Temperature Range
TJ
–40
—
140
°C
1 The device contains an internal voltage regulator to generate the logic and PLL supply out of the I/O supply. The given
operating range applies when this regulator is disabled and the device is powered from an external source.
2 Some blocks e.g. ATD (conversion) and NVMs (program/erase) require higher bus frequencies for proper operation.
A.1.8 Power Dissipation and Thermal Characteristics
Power dissipation and thermal characteristics are closely related. The user must assure that the maximum
operating junction temperature is not exceeded. The average chip-junction temperature (TJ) in °C can be
obtained from:
TJ = TA + (PD • ΘJA)
TJ = Junction Temperature, [°C ]
TA = Ambient Temperature, [°C ]
PD = Total Chip Power Dissipation, [W]
ΘJA = Package Thermal Resistance, [°C/W]
The total power dissipation can be calculated from:
PD = PINT + PIO
PINT = Chip Internal Power Dissipation, [W]
MC9S12E128 Data Sheet, Rev. 1.07
Freescale Semiconductor
567