MC68HC908GP32_08 Datasheet, PDF(40/266 Page) Freescale Semiconductor, Inc – M68HC08 Microcontrollers

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

MC68HC908GP32_08 Datasheet, PDF (40/266 Pages) Freescale Semiconductor, Inc – M68HC08 Microcontrollers

◁

Memory

6. Wait for a time, tErase (min. 1 ms or 4 ms)

7. Clear the ERASE bit.

8. Wait for a time, tnvh (min. 5 Âµs)

9. Clear the HVEN bit.

10. After a time, trcv (typ. 1 Âµs), the memory can be accessed again in read mode.

NOTE

Programming and erasing of FLASH locations cannot be performed by

code being executed from FLASH memory. While these operations must

be performed in the order shown, other unrelated operations may occur

between the steps.

In applications that need more than 1000 program/erase cycles, use the 4-ms page erase specification

to get improved long-term reliability. Any application can use this 4-ms page erase specification.

However, in applications where a FLASH location will be erased and reprogrammed less than 1000 times,

and speed is important, use the 1-ms page erase specification to get a shorter cycle time.

2.6.4 FLASH Mass Erase Operation

Use this step-by-step procedure to erase entire FLASH memory.

1. Set both the ERASE bit, and the MASS bit in the FLASH control register.

2. Read the FLASH block protect register.

3. Write any data to any FLASH address(1) within the FLASH memory address range.

4. Wait for a time, tnvs (min. 10 Âµs)

5. Set the HVEN bit.

6. Wait for a time, tMErase (min. 4 ms)

7. Clear the ERASE and MASS bits.

NOTE

Mass erase is disabled whenever any block is protected (FLBPR does not

equal $FF).

8. Wait for a time, tnvhl (min. 100 Âµs)

9. Clear the HVEN bit.

10. After a time, trcv (min. 1 Âµs), the memory can be accessed again in read mode.

NOTE

Programming and erasing of FLASH locations cannot be performed by

code being executed from the FLASH memory. While these operations

must be performed in the order shown, other unrelated operations may

occur between the steps.

2.6.5 FLASH Program Operation

Programming of the FLASH memory is done on a row basis. A row consists of 64 consecutive bytes

starting from addresses $XX00, $XX40, $0080 and $XXC0.

1. When in Monitor mode, with security sequence failed (see 18.3.2 Security), write to the FLASH block protect register instead

of any FLASH address.

MC68HC908GP32 Data Sheet, Rev. 10

40

Freescale Semiconductor

▷