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MC9S08GB60 Datasheet, PDF (261/290 Pages) Motorola, Inc – Microcontrollers | |||
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Electrostatic Discharge (ESD) Protection Characteristics
A.4 Electrostatic Discharge (ESD) Protection Characteristics
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualiï¬cation
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. All ESD testing is in conformity with CDF-AEC-Q00 Stress
Test Qualiï¬cation for Automotive Grade Integrated Circuits. (http://www.aecouncil.com/) This device was
qualiï¬ed to AEC-Q100 Rev E. A device is considered to have failed if, after exposure to ESD pulses, the
device no longer meets the device speciï¬cation requirements. Complete dc parametric and functional
testing is performed per the applicable device speciï¬cation at room temperature followed by hot
temperature, unless speciï¬ed otherwise in the device speciï¬cation.
Table A-3. ESD Protection Characteristics
Parameter
ESD Target for Machine Model (MM)
MM circuit description
ESD Target for Human Body Model (HBM)
HBM circuit description
Symbol
VTHMM
VTHHBM
Value
Unit
200
V
2000
V
A.5 DC Characteristics
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Table A-4. DC Characteristics (Sheet 1 of 2)
(Temperature Range = â40 to 85°C Ambient)
Parameter
Symbol
Min
Typical1
Max
Unit
Supply voltage (run, wait and stop modes.)
0 < fBus < 8 MHz
0 < fBus < 20 MHz
VDD
1.8
2.08
3.6
V
3.6
Minimum RAM retention supply voltage applied to
VDD
Low-voltage detection threshold â high range
(VDD falling)
(VDD rising)
Low-voltage detection threshold â low range
(VDD falling)
(VDD rising)
Low-voltage warning threshold â high range
(VDD falling)
(VDD rising)
Low-voltage warning threshold â low range
(VDD falling)
(VDD rising)
VRAM
VLVDH
VLVDL
VLVWH
VLVWL
1.02
2.08
2.16
1.80
1.88
2.35
2.35
2.08
2.16
2.1
2.19
1.82
1.90
2.40
2.40
2.1
2.19
â
V
2.2
V
2.27
1.91
V
1.99
2.5
V
2.2
V
2.27
MC9S08GB/GT Data Sheet, Rev. 2.3
Freescale Semiconductor
261
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