W641GG2JB Datasheet, PDF (67/109 Pages) Winbond – 1-Gbit GDDR3 Graphics SDRAM

W641GG2JB
1-Gbit GDDR3 Graphics SDRAM
6.15.7 Write with Autoprecharge followed by Read / Read with Autoprecharge on another bank
CLK#
CLK
Com.
0
WR/A
A9,
B/C
A2-A7
A8
WDQS
DQ
1
2
N/D
DES
WL = 3
3
4
5
6
7
8
9
DES
DES
DES
DES
DES
tWR/A
tWTR
tWTR
RD
RD/A
B/C
DES
tRP
D0 D1 D2 D3
Begin of Autoprecharge
Com.
WR/A
N/D
DES
DES
DES
DES
DES
DES
DES
RD
RD/A
A9,
B/C
B/C
A2-A7
A8
WDQS
WL = 4
tWTR
tWR/A
tRP
DQ
D0 D1 D2 D3
Begin of Autoprecharge
Notes :
Com. : Command
Addr. : Address B / C
WL : Write Latency
Don‘t care
0 : RD, 1 : RD/A
B / C: Bank / Column address
WR/A : WRITE with Autoprecharge
RD RD/A : READ or
READ with Autoprecharge
D# : Data to B / C
DES : Deselect
N/D : NOP or Deselect
1. Shown with nominal value of t_DQSS.
2. The RD command is only allowed for another activated bank.
3. t_WR/A is set to 4 in this example.
4. WDQS can only transition when data is applied at the chip input and during pre- and postambles.
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Publication Release Date: Apr, 22, 2011
Revision A01-002