C8051F52X Datasheet, PDF (74/220 Pages) Silicon Laboratories – 8/4/2 kB ISP Flash MCU Family

C8051F52x-53x
Table 8.1. Comparator Electrical Characteristics
V_DD = 2.1 V, –40 to +125 °C unless otherwise noted.
All specifications apply to both Comparator0 and Comparator1 unless otherwise noted.
Parameter
Response Time:
Mode 0, Vcm¹ = 1.5 V
Response Time:
Mode 1, Vcm¹ = 1.5 V
Response Time:
Mode 2, Vcm¹ = 1.5 V
Response Time:
Mode 3, Vcm¹ = 1.5 V
Common-Mode Rejection
Ratio
Positive Hysteresis 1
Positive Hysteresis 2
Positive Hysteresis 3
Positive Hysteresis 4
Negative Hysteresis 1
Negative Hysteresis 2
Negative Hysteresis 3
Negative Hysteresis 4
Inverting or Non-Inverting
Input Voltage Range
Input Capacitance
Input Bias Current
Input Offset Voltage
Input Impedance
Power Supply
Power Supply Rejection²
Power-up Time
Power Consumption
Supply Current at DC
Conditions
CP0+ – CP0– = 100 mV
CP0+ – CP0– = –100 mV
CP0+ – CP0– = 100 mV
CP0+ – CP0– = –100 mV
CP0+ – CP0– = 100 mV
CP0+ – CP0– = –100 mV
CP0+ – CP0– = 100 mV
CP0+ – CP0– = –100 mV
CP0HYP1-0 = 00
CP0HYP1-0 = 01
CP0HYP1-0 = 10
CP0HYP1-0 = 11
CP0HYN1-0 = 00
CP0HYN1-0 = 01
CP0HYN1-0 = 10
CP0HYN1-0 = 11
High Speed Mode (CP1HIQE = ‘1’)
Low Speed Mode (CP1HIQE = ‘0’)
High Speed Mode (CP1HIQE = ‘1’)
Low Speed Mode (CP1HIQE = ‘0’)
Mode 0
Mode 1
Mode 2
Mode 3
Min Typ
Max
Units
— 780
—
ns
— 980
—
ns
— 850
—
ns
— 1120
—
ns
— 870
—
ns
— 1310
—
ns
— 1980
—
ns
— 4770
—
ns
—
1.5
TBD
mV/V
— 0.45
TBD
mV
TBD
5
TBD
mV
TBD 9.95
TBD
mV
TBD 19.47 TBD
mV
— 0.45
TBD
mV
TBD 4.99
TBD
mV
TBD 9.93
TBD
mV
TBD 19.41 TBD
mV
–0.25 — V_DD + 0.25 V
—
4
—
pF
—
0.5
—
nA
–10 —
10
mV
—
TBD
TBD
—
kΩ
kΩ
—
0.2
—
2.3
—
TBD
TBD
—
13
—
6
—
3
—
1
4
—
—
TBD
TBD
TBD
TBD
mV/V
µs
mA
mA
µA
µA
µA
µA
Notes:
1. Vcm is the common-mode voltage on CP0+ and CP0–.
2. Guaranteed by design and/or characterization.
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Rev. 0.3