MC68HC08AB16A Datasheet, PDF (71/380 Pages) Motorola, Inc – HCMOS Microcontroller Unit

Freescale Semiconductor, Inc.
EEPROM
EEPROM Registers
EEPGM — EEPROM Program/Erase Enable
This read/write bit enables the internal charge pump and applies the
programming/erasing voltage to the EEPROM array if the EELAT bit
is set and a write to a valid EEPROM location has occurred. Reset
clears the EEPGM bit.
1 = EEPROM programming/erasing power switched on
0 = EEPROM programming/erasing power switched off
NOTE:
Writing 0s to both the EELAT and EEPGM bits with a single instruction
will only clear EEPGM. This is to allow time for the removal of high
voltage.
5.11.2 EEPROM Array Configuration Register
The EEPROM array configuration register configures EEPROM security
and EEPROM block protection.
This read-only register is loaded with the contents of the EEPROM non-
volatile register (EENVR) after a reset.
Address: $FE1F
Bit 7
6
5
4
3
2
1
Bit 0
Read: CON3 CON2 CON1 EEPRTCT EEBP3 EEBP2 EEBP1 EEBP0
Write:
Reset:
Contents of EENVR ($FE1C)
Figure 5-3. EEPROM Array Configuration Register (EEACR)
CON[3:1] — Unused
EEPRTCT — EEPROM Protection Bit
The EEPRTCT bit is used to enable the security feature in the
EEPROM (see 5.7 EEPROM Security Options). This bit has no
effect unless the EESEC bit is set in the mask option register B
($003F) (see 6.5 Mask Option Register B).
1 = EEPROM security disabled
0 = EEPROM security enabled
MC68HC08AB16A — Rev. 2.0
MOTOROLA
EEPROM
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Technical Data
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