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| MC68HC08AB16A Datasheet, PDF (369/380 Pages) Motorola, Inc – HCMOS Microcontroller Unit | |||
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Freescale Semiconductor, Inc.
Electrical Specifications
EEPROM and Memory Characteristics
Characteristic(1)
Symbol
Min
Typ(2)
Max
Unit
Low-voltage inhibit reset/recover hysteresis
POR rearm voltage(7)
POR reset voltage(8)
POR rise time ramp rate(9)
HLVI
100
150
VPOR
0
â
VPORRST
0
â
RPOR
0.02
â
â
mV
200
mV
800
mV
â
V/ms
Notes:
1. VDD = 5.0 Vdc ± 10%, VSS = 0 Vdc, TA = TL to TH, unless otherwise noted
2. Typical values reflect average measurements at midpoint of voltage range, 25 °C only.
3. Run (operating) IDD measured using external square wave clock source (fBUS = 8.4MHz). All inputs 0.2 V from rail. No dc
loads. Less than 100 pF on all outputs. CL = 20 pF on OSC2. All ports configured as inputs. OSC2 capacitance linearly
affects run IDD. Measured with all modules enabled.
4. Wait IDD measured using external square wave clock source (fBUS = 8.4MHz). All inputs 0.2 V from rail. No dc loads. Less
than 100 pF on all outputs. CL = 20 pF on OSC2. All ports configured as inputs. OSC2 capacitance linearly affects wait
IDD. Measured with PLL and LVI enabled.
5. Stop IDD is measured with OSC1 = VSS.
6. Pullups are disabled. Port B leakage is specified in 23.10 ADC Characteristics.
7. Maximum is highest voltage that POR is guaranteed.
8. Maximum is highest voltage that POR is possible.
9. If minimum VDD is not reached before the internal POR reset is released, RST must be driven low externally until minimum
VDD is reached.
23.7 EEPROM and Memory Characteristics
Characteristic
Symbol
Min
Max
Unit
RAM data retention voltage
EEPROM programming time per byte
VRDR
0.7
â
V
tEEPGM
10
â
ms
EEPROM erasing time per byte
EEPROM erasing time per block
tEBYTE
10
â
ms
tEBLOCK
10
â
ms
EEPROM erasing time per bulk
tEBULK
10
â
ms
EEPROM programming voltage discharge period
tEEFPV
100
â
µs
Number of programming operations to the same EEPROM
byte before erase(1)
â
â
8
â
EEPROM write/erase cycles at 10ms write time (85°C)
â
10,000 â
Cycles
EEPROM data retention after 10,000 write/erase cycles
â
10
â
Years
Notes:
1. Programming a byte more times than the specified maximum may affect the data integrity of that byte. The byte must
be erased before it can be programmed again.
MC68HC08AB16A â Rev. 2.0
MOTOROLA
Electrical Specifications
For More Information On This Product,
Go to: www.freescale.com
Technical Data
369
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