MC68HC908GZ8 Datasheet, PDF (338/344 Pages) Motorola, Inc – Microcontrollers

Electrical Specifications
24.15 Memory Characteristics
Characteristic
RAM data retention voltage
FLASH program bus clock frequency
FLASH read bus clock frequency
FLASH page erase time
< 1K cycles
> 1K cycles
FLASH mass erase time
FLASH PGM/ERASE to HVEN set up time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program HV period
FLASH endurance
FLASH data retention time
Symbol
Min
Max
Unit
V_RDR
1.3
—
V
—
1
—
MHz
f_Read(1)
dc
8M
Hz
t_Erase
1
4
t_MErase
4
t_nvs
10
t_nvh
5
t_nvhl
100
t_pgs
5
t_PROG
30
t_rcv(2)
1
t_HV(3)
—
—
10 k
—
10
—
ms
—
—
ms
—
µs
—
µs
—
µs
—
µs
40
µs
—
µs
4
ms
—
Cycles
—
Years
1. f_Read is defined as the frequency range for which the FLASH memory can be read.
2. t_rcv is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing
HVEN to logic 0.
3. t_HV is defined as the cumulative high voltage programming time to the same row before next erase.
t_HV must satisfy this condition: t_nvs + t_nvh + t_pgs + (t_PROG × 64) ≤ t_HV max.
Data Sheet
338
Electrical Specifications
MC68HC908GZ8
Freescale Semiconductor