DS617 Datasheet, PDF (73/88 Pages) Xilinx, Inc – MultiBoot Bitstream, Design Revision Storage

R
Platform Flash XL High-Density Configuration and Storage Device
X-Ref Target - Figure 41
Start
Write 20h⁽²⁾
Write Block
Address & D0h
erase_command ( blockToErase ) {
writeToFlash (blockToErase, 0x20) ;
/*see note (2) */
writeToFlash (blockToErase, 0xD0) ;
/* Memory enters read status state after
the Erase Command */
Read Status
Register⁽²⁾
do {
status_register=readFlash (blockToErase) ;
/* see note (2) */
/* E or G must be toggled*/
NO
SR7 = 1
YES
} while (status_register.SR7== 0) ;
NO
SR3 = 0
YES
YES
SR4, SR5 = 1
NO
NO
SR5 = 0
YES
V_PP Invalid
Error⁽¹⁾
Command
Sequence Error⁽¹⁾
Erase Error⁽¹⁾
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
if ( (status_register.SR4==1) && (status_register.SR5==1) )
/* command sequence error */
error_handler ( ) ;
if ( (status_register.SR5==1) )
/* erase error */
error_handler ( ) ;
NO
SR1 = 0
Erase to Protected
Block Error⁽¹⁾
if (status_register.SR1==1) /*program to protect block error */
error_handler ( ) ;
YES
End
}
Notes:
1. If an error is found, the Status Register must be cleared before further Program/Erase operations.
2. Any address within the bank can equally be used.
3. To read the memory in Asynchronous mode, the CR15 Configuration Register bit must be written to 1.
Figure 41: Block Erase Flowchart and Pseudocode
DS617_35_101608
DS617 (v3.0.1) January 07, 2010
www.xilinx.com
Product Specification
73