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DS617 Datasheet, PDF (45/88 Pages) Xilinx, Inc – MultiBoot Bitstream, Design Revision Storage
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Platform Flash XL High-Density Configuration and Storage Device
Table 25: Capacitance(1)
Symbol
Parameter
CIN
COUT
Input capacitance
Output capacitance
Notes:
1. Sampled only, not 100% tested.
Test condition
VIN = 0V
VOUT = 0V
Min Max Unit
6
8
pF
8
12
pF
Table 26: DC Characteristics: Currents
Symbol
Parameter
Test Condition
Typ Max Unit
ILI
Input leakage current
ILO
Output leakage current
Supply current asynchronous read
(F = 5 MHz)
0V = VIN = VDDQ
0V = VOUT = VDDQ
E = VIL, G = VIH
–
±1
µA
–
±1
µA
14
16
mA
4 word
13
17
mA
Supply current synchronous read
(F = 40 MHz)
IDD1
8 word
16 word
Continuous
15
19
mA
17
21
mA
21
26
mA
4 word
16
19
mA
Supply current synchronous read
(F = 54 MHz)
8 word
16 word
19
23
mA
22
26
mA
Continuous
23
28
mA
IDD2
Supply current (reset)
IDD3
Supply current (standby)
RP = VSS ± 0.2V
E = VDDQ ± 0.2V
K=VSS
25
75
µA
25
75
µA
IDD4
IDD5(1)
Supply current (automatic standby)
Supply current (program)
Supply current (erase)
IDD6(1),(2)
Supply current (dual operations)
E = VIL, G = VIH
25
75
µA
VPP = VPPH
8
20
mA
VPP = VDDQ
10
25
mA
VPP = VPPH
8
20
mA
VPP = VDDQ
10
25
mA
Program/Erase in one Bank,
Asynchronous Read in another Bank
24
41
mA
Program/Erase in one Bank,
Synchronous Read (Continuous f =
33
53
mA
54 MHz) in another Bank
IDD7(1)
IPP1(1)
IPP2
IPP3(1)
Supply current program/erase
suspended (standby)
VPP supply current (program)
VPP supply current (erase)
VPP supply current (read)
VPP supply current (standby)
E = VDDQ ± 0.2V
K=VSS
VPP = VPPH
VPP = VDDQ
VPP = VPPH
VPP = VDDQ
VPP = VDDQ
VPP = VDDQ
25
75
µA
2
5
mA
0.2
5
µA
2
5
mA
0.2
5
µA
0.2
5
µA
0.2
5
µA
Notes:
1. Sampled only, not 100% tested.
2. VDD dual operation current is the sum of read and program or erase currents.
DS617 (v3.0.1) January 07, 2010
www.xilinx.com
Product Specification
45
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