DS617 Datasheet, PDF (43/88 Pages) Xilinx, Inc – MultiBoot Bitstream, Design Revision Storage

R
Platform Flash XL High-Density Configuration and Storage Device
Maximum Rating
Stressing the device above the rating listed in Table 22 might cause permanent damage to the device. These are stress
ratings only, and proper operation of the device at these or any other conditions above those indicated in this specification
is not implied. Exposure to Absolute Maximum Rating conditions for extended periods can affect device reliability.
Table 22: Absolute Maximum Ratings
Symbol
Parameter
T_A
T_BIAS
T_J
T_STG
V_IO
V_DD
V_DDQ
V_PP
I_O
T_VPPH
Ambient operating temperature
Temperature under bias
Junction temperature
Storage temperature
Input or output voltage
Supply voltage
Input/output supply voltage
Program voltage
Output short circuit current
Time for V_PP at V_PPH
Value
Min Max
–40
85
–40
85
–
125
–65
125
–0.5
4.2
–0.2
2.5
–0.2
3.8
–0.2
10
–
100
–
100
Unit
°C
°C
°C
°C
V
V
V
V
mA
hours
DC and AC Parameters
This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The
parameters in the DC and AC characteristics tables that follow are derived from tests performed under the measurement
conditions summarized in Table 23. Designers should check that the operating conditions in their circuit match the operating
conditions when relying on the quoted parameters.
Table 23: Operating and AC Measurement Conditions
Parameter
V_DD supply voltage
V_DDQ supply voltage
V_PP supply voltage (Factory environment)
V_PP supply voltage (Application environment)
Ambient operating temperature
Load capacitance (C_L)
Input rise and fall times
Input pulse voltages
Input and output timing reference voltages
Min
Max
1.7
2.0
3.0
3.6
2.3
2.7
8.5
9.5
–0.4
–40
V_DDQ+0.4
85
30
–
5
0 to V_DDQ
V_DDQ/2
Units
V
V
V
V
V
°C
pF
ns
V
V
DS617 (v3.0.1) January 07, 2010
www.xilinx.com
Product Specification
43