DS617 Datasheet, PDF (44/88 Pages) Xilinx, Inc – MultiBoot Bitstream, Design Revision Storage

R
Platform Flash XL High-Density Configuration and Storage Device
Table 24: Quality and Reliability Characteristics
Symbol
Description
Min
T_DR
N_PE
V_ESD
Data retention
Program/erase cycles (Endurance)
Electrostatic Discharge (ESD)
20
10,000⁽¹⁾
2,000
Notes:
1. Program/erase cycles when V_PP = V_DDQ. See Table 21, page 44 for program/erase cycles when V_PP = V_PPH.
X-Ref Target - Figure 22
V_DDQ
0V
V_DDQ
2
DS617_17_032708
Figure 22: AC Measurement I/O Waveform
X-Ref Target - Figure 23
V_DDQ V_DD
V_DDQ
Device
Under
Test
22 kΩ
Max
–
–
–
Units
Years
Cycles
Volts
0.1 µF
0.1 µF
C_L(1)
22 kΩ
Notes:
1. C_L includes JIG capacitance.
X-Ref Target - Figure 24
DS617_18_101608
Figure 23: AC Measurement Load Circuit
V_DDQ V_DD
Device
Under
Test
V_DDQ
4.7 kΩ
READY_WAIT
0.1 µF
0.1 µF
C_L(1)
DS617_19_101608
Notes:
1. C_L includes JIG capacitance.
Figure 24: Connecting the READY_WAIT Pin when Using the Device
DS617 (v3.0.1) January 07, 2010
www.xilinx.com
Product Specification
44