NSC800 Datasheet, PDF (72/76 Pages) National Semiconductor (TI) – NSC800TM High-Performance Low-Power CMOS Microprocessor

14 0 NSC800M 883B MIL-STD-833
Class C Screening
National Semiconductor offers the NSC800D and NSC800E
with full class B screening per MIL-STD-883 for Military
Aerospace programs requiring high reliability In addition
this screening is available for all of the key NSC800 periph-
eral devices
Electrical testing is performed in accordance with
RESTS800X which tests or guarantees all of the electrical
performance characteristics of the NSC800 data sheet A
copy of the current revision of RETS800X is available upon
request
Test
Internal Visual
Stabilization Bake
Temperature Cycling
Constant Acceleration
Fine Leak
Gross Leak
Burn-In
Final Electrical
PDA
QA Acceptance
Quality Conformance
External Visual
100% Screening Flow
MIL-STD-883 Method Condition
2010B
1008 C 24 Hrs a150 C
1010 C 10 Cycles b65 C a150 C
2001 E 30 000 G’s Y1 Axis
1014 A or B
1014C
1015 160 Hrs a125 C (using
burn-in circuits shown below)
a25 C DC per RETS800X
10% Max
a125 C AC and DC per RETS800X
b55 C AC and DC per RETS800X
a25 C AC per RETS800X
5005
2009
Requirement
100%
100%
100%
100%
100%
100%
100%
100%
100%
100%
100%
Sample Per
Method 5005
100%
15 0 Burn-In Circuits
5240HR
NSC800D 883B (Dual-In-Line)
5241HR
NSC800E 883B (Leadless Chip Carrier)
Top View
TL C 5171–32
All resistors 2 7 kX unless marked otherwise
Note 1 All resistors are W g 5% unless otherwise specified
Note 2 All clocks 0V to 3V 50% duty cycle in phase with k 1 ms rise and fall time
Note 3 Device to be cooled down under power after burn-in
TL C 5171 – 33
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