MC68HC908AZ60 Datasheet, PDF (58/480 Pages) Motorola, Inc – HCMOS Microcontroller Unit

FLASH-2 Memory
NOTE:
6. Clear the HVEN bit.
7. Wait for a time, t _KILL, for the high voltages to dissipate.
8. Clear the ERASE bit.
9. After time t_HVD, the memory can be accessed in read mode again.
While these operations must be performed in the order shown, other
unrelated operations may occur between the steps.
Table 2 shows the various block sizes which can be erased in one erase
operation.
BLK1
0
0
1
1
Table 2. Erase Block Sizes
BLK0
0
1
0
1
Block Size, Addresses Cared
Full Array: 24 Kbytes
One-Half Array: 16 Kbytes (A14 )
Eight Rows: 512 Bytes (A14–A9)
Single Row: 64 Bytes (A14–A6)
In step 2 of the erase operation, the cared addresses are latched and
used to determine the location of the block to be erased. For instance,
with BLK0 = BLK1 = 0, writing to any Flash address in the range
$0450-$05FF or $0E00-$7FFF will enable the full-array erase.
MC68HC908AZ60 — Rev 2.0
56
FLASH-2 Memory
6-flash-2
MOTOROLA