MC68HC908AZ60 Datasheet, PDF (447/480 Pages) Motorola, Inc – HCMOS Microcontroller Unit

Specifications
Electrical Specifications
Memory Characteristics
Characteristic
RAM Data Retention Voltage
EEPROM Programming Time per Byte
EEPROM Erasing Time per Byte
EEPROM Erasing Time per Block
EEPROM Erasing Time per Bulk
EEPROM Programming Voltage Discharge Period
EEPROM Enable Recovery Time
EEPROM Stop Recovery Time
EEPROM Write/Erase Cycles
@ 10 ms Write Time +125 °C
EEPROM Data Retention
After 10,000 Write/Erase Cycles
Flash Pages per Row
Flash Bytes per Page
Flash Read Bus Clock Frequency
FLASH Charge Pump Clock Frequency
(see FLASH Charge Pump Frequency Control on
page 41)
FLASH Block/Bulk Erase Time
FLASH High Voltage Kill Time
FLASH Return to Read Time
FLASH Page Program Pulses⁽¹⁰⁾
FLASH Page Program Step Size⁽¹⁰⁾
FLASH Cumulative Program Time per Row
Between Erase Cycles
FLASH HVEN Low to MARGIN High Time
FLASH MARGIN High to PGM Low Time
Symbol
V_RDR
t_EEPGM
t_EEBYTE
t_EEBLOCK
t_EEBULK
t_EEFPV
t_EEOFF
t_EESTOP
f_READ(1)
f_PUMP(2)
t_ERASE
t_KILL
t_HVD
fls_PULSES⁽³⁾
t_STEP⁽⁴⁾
t_ROW⁽⁵⁾
t_HVTV
t_VTP
Min
0.7
10
10
10
10
100
600
600
10,000
10
8
8
32K
1.8
100
200
50
—
0.8
—
50
150
FLASH Return to Read after Margin Read Time
t_RECOVERY⁽⁶⁾
500
FLASH Row Erase Endurance⁽⁷⁾ @ +125 °C
100
FLASH Row Program Endurance⁽⁸⁾ @ +125 °C
100
FLASH Data Retention Time⁽⁹⁾
10
1. f_READ is defined as the frequency range for which the FLASH memory can be read.
Max
—
—
—
—
—
—
—
—
—
—
8
8
8.4M
2.3
110
—
—
84
1.2
8
—
—
—
—
—
—
Unit
V
ms
ms
ms
ms
µs
µs
µs
Cycles
Years
pages
bytes
Hz
MHz
ms
µs
µs
pulses
ms
pages
µs
µs
dummy
read
cycles
cycles
cycles
years
13-specs
MOTOROLA
Specifications
MC68HC908AZ60 — Rev 2.0
445