MC68HC908AZ60 Datasheet, PDF (44/480 Pages) Motorola, Inc – HCMOS Microcontroller Unit

FLASH-1 Memory
NOTE:
2. Insure target portion of array is unprotected, read the block protect
register: address $FF80. See FLASH Block Protection on page 46
and FLASH-1 Block Protect Register on page 47 for more
information.
3. Write to any FLASH address with any data within the block
address range desired.
4. Set the HVEN bit.
5. Wait for a time, t_ERASE.
6. Clear the HVEN bit.
7. Wait for a time, t _KILL, for the high voltages to dissipate.
8. Clear the ERASE bit.
9. After time t_HVD, the memory can be accessed in read mode again.
While these operations must be performed in the order shown, other
unrelated operations may occur between the steps.
Table 2 shows the various block sizes which can be erased in one erase
operation.
BLK1
0
0
1
1
Table 2. Erase Block Sizes
BLK0
0
1
0
1
Block Size, Addresses Cared
Full Array: 24 Kbytes
One-Half Array: 16 Kbytes (A14 )
Eight Rows: 512 Bytes (A14–A9)
Single Row: 64 Bytes (A14–A6)
In step 2 of the erase operation, the cared addresses are latched and
used to determine the location of the block to be erased. For instance,
with BLK0 = BLK1 = 0, writing to any Flash address in the range $8000
to $FFFF will enable the full-array erase.
MC68HC908AZ60 — Rev 2.0
42
FLASH-1 Memory
8-flash-1
MOTOROLA