HYB18T256400AF Datasheet, PDF (87/90 Pages) Infineon Technologies AG – 256 Mbi t DDR2 SDRAM

10. DDR2 Component Nomenclature
HYB18T256400/800/160AF
256Mb DDR2 SDRAM
1 2 34 5 6 7 8 9
Example : ^{H Y B 1 8 T 2 5 6 4 0 0 A} C ^{- 5}
1
INFINEON
Component Prefix
HYB for DRAM Components
2 Power Supply Voltage 18 = 1.8 V Power Supply
6 Product Variations
7 Die Revision
3 DRAM Technology
T = DDR2
4 Memory Density
256 = 256 Mb
512 = 512 Mb
1G = 1024 Mb
2G = 2048 Mb
40 = x4, 4 data in/outputs
5 Memory Organisation 80 = x8, 8 data in/outputs
16 = x16, 16 data in/outputs
8 Package Type
9 Speed Grade
0 = standard
2 = two dies in one package
A = 1st Generation
B = 2nd Generation
C = 3rd Generation
C = BGA package
F = BGA package (lead and
halogen free)
-5 = DDR2-400-333
-3.7 = DDR2-533-444
-3 = DDR2-667-444
-3S = DDR2-667-555
Page 87
Rev. 1.02 May 2004
INFINEON Technologies