HYB18T256400AF Datasheet, PDF (71/90 Pages) Infineon Technologies AG – 256 Mbi t DDR2 SDRAM

HYB18T256400/800/160AF
256Mb DDR2 SDRAM
5.5 Input / Output Capacitance
Symbol
Parameter
CCK Input capacitance, CK and CK
CDCK Input capacitance delta, CK and CK
CI Input capacitance, all other input-only pins
CDI Input capacitance delta, all other input-only pins
Input/output capacitance,
CIO _{DQ, DM, DQS, DQS, RDQS, RDQS}
CDIO
Input/output capacitance delta,
DQ, DM, DQS, DQS, RDQS, RDQS
min.
1.0
-
1.0
-
3.0
-
max.
2.0
0.25
2.0
0.25
4.0
0.5
Units
pF
pF
pF
pF
pF
pF
5.6 Power & Ground Clamp V-I Characteristics
Power and Ground clamps are provided on address (A0~A12, BA0, BA1), RAS, CAS, CS, WE, CKE and ODT
pins. The V-I characteristics for pins with clamps is shown in the following table:
Voltage across clamp ^{Minimum Power}
(V)
Clamp Current (mA)
0.0
0
0.1
0
0.2
0
0.3
0
0.4
0
0.5
0
0.6
0
0.7
0
0.8
0.1
0.9
1.0
1.0
2.5
1.1
4.7
1.2
6.8
1.3
9.1
1.4
11.0
1.5
13.5
1.6
16.0
1.7
18.2
1.8
21.0
Minimum Ground
Clamp Current (mA)
0
0
0
0
0
0
0
0
0.1
1.0
2.5
4.7
6.8
9.1
11.0
13.5
16.0
18.2
21.0
Page 71
Rev. 1.02 May 2004
INFINEON Technologies