HYB18T256400AF Datasheet, PDF (63/90 Pages) Infineon Technologies AG – 256 Mbi t DDR2 SDRAM

HYB18T256400/800/160AF
256Mb DDR2 SDRAM
4. Operating Conditions
4.1 Absolute Maximum Ratings
Symbol
Parameter
VDD ^{Voltage on VDD pin relative to VSS}
VDDQ ^{Voltage on VDDQ pin relative to VSS}
VDDL ^{Voltage on VDDL pin relative to VSS}
VIN, VOUT Voltage on any pin relative to VSS
TSTG Storage Temperature
Rating
-1.0 to + 2.3
-0.5 to + 2.3
-0.5 to + 2.3
-0.5 to + 2.3
-55 to + 100
Units
V
V
V
V
°C
Notes
1
1
1
1
1, 2
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions,
please refer to JESD51-2 standard.
4.2 DRAM Component Operating Temperature Range
Symbol
Parameter
TOPER Operating Temperature
Rating
0 to 95
Units
o_C
Notes
1~4
1. Operating Temperature is the case surface temperature on the center / top side of the DRAM. For measurement conditions,
please refer to the JEDEC document JESD51-2.
2. The operating temperature range are the temperatures where all DRAM specification will be supported. During operation, the
DRAM case temperature must be maintained between 0 - 95^oC under all other specification parameters.
3. Some application may require to operate the DRAM up to 95^oC case temperature. In this case above 85^oC case temperature the
Auto-Refresh command interval has to be reduced to tREFI = 3.9 µs.
4. Self-Refresh period is hard-coded in the chip and therefore it is imperative that the system ensures the DRAM is below 85^oC case
temperature before initiating self-refresh operation.
Page 63
Rev. 1.02 May 2004
INFINEON Technologies