HYB18T256400AF Datasheet, PDF (85/90 Pages) Infineon Technologies AG – 256 Mbi t DDR2 SDRAM

HYB18T256400/800/160AF
256Mb DDR2 SDRAM
8.4 Overshoot and Undershoot Specification
8.4.1 AC Overshoot / Undershoot Specification for Address and Control Pins
Parameter
Maximum peak amplitude allowed for overshoot area
Maximum peak amplitude allowed for undershoot area
Maximum overshoot area above VDD
Maximum undershoot area below VSS
DDR2
-400
0.9
0.9
0.75
0.75
DDR2
-533
0.9
0.9
0.56
0.56
DDR2
-667
0.9
0.9
0.45
0.45
Units
V
V
V.ns
V.ns
VDD
Maximum Amplitude
Overshoot Area
VSS
Maximum Amplitude
Time (ns)
Undershoot Area
8.4.2 AC Overshoot / Undershoot Specification for Clock, Data, Strobe and Mask Pins
Parameter
Maximum peak amplitude allowed for overshoot area
Maximum peak amplitude allowed for undershoot area
Maximum overshoot area above VDDQ
Maximum undershoot area below VSSQ
DDR2
-400
0.9
0.9
0.38
0.38
DDR2
-533
0.9
0.9
0.28
0.28
DDR2
-667
0.9
0.9
0.23
0.23
Units
V
V
V.ns
V.ns
VDDQ
VSSQ
Maximum Amplitude
Maximum Amplitude
Time (ns)
Overshoot Area
Undershoot Area
Page 85
Rev. 1.02 May 2004
INFINEON Technologies