HYB18T256400AF Datasheet, PDF (5/90 Pages) Infineon Technologies AG – 256 Mbi t DDR2 SDRAM

1.2.1 x8 Components
Symbol
A0~A12
A0~A9
BA0, BA1
A10/AP
CS
RAS
CAS
WE
DQ0~DQ7
CKE
CK, CK
DM
Function
Row Address Inputs
Column Address Inputs
Bank Address Inputs
Column Address Input
for Auto-Precharge
Chip Select
Row Address Strobe
Column Address Strobe
Write Enable
Data Inputs/Outputs (x8)
Clock Enable
Differential Clock Inputs
Data Input Mask
1.2.3 x16 Components
Symbol
A0~A12
A0~A8
BA0, BA1
A10/AP
CS
RAS
CAS
WE
LDQ0~7, UDQ0~7
CKE
CK, CK
LDM, UDM
Function
Row Address Inputs
Column Address Inputs
Bank Address Inputs
Column Address Input
for Auto-Precharge
Chip Select
Row Address Strobe
Column Address Strobe
Write Enable
Data Inputs/Outputs
Clock Enable
Differential Clock Inputs
Data Input Masks
HYB18T256400/800/160AF
256Mb DDR2 SDRAM
Symbol
DQS, DQS
RDQS, RDQS
VDD
VSS
VDDQ
VSSQ
VDDL
VSSDL
VREF
ODT
RFU
NC
Function
Differential Data Strobes
Differential Read Data Strobes
Supply Voltage
Ground
Supply Voltage for DQ
Ground for DQs
Supply Voltage for DLL
Ground for DLL
Reference Voltage for SSTL
Inputs
On Die Termination Enable
Reserved for future use
Not connected
Symbol
LDQS,LDQS
UDQS,UDQS
NC
VDD
VSS
VDDQ
VSSQ
VDDL
VSSDL
VREF
ODT
RFU
NC
Function
Differential Data Strobes
No Connection (Chip to Pin)
Supply Voltage
Ground
Supply Voltage for DQ
Ground for DQs
Supply Voltage for DLL
Ground for DLL
Reference Voltage for SSTL
Inputs
On Die Termination Enable
reserved for future use
Not connected
Page 5
Rev. 1.02 May 2004
INFINEON Technologies